Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-25
2009-10-06
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S682000, C257SE29152
Reexamination Certificate
active
07598572
ABSTRACT:
An integrated circuit device having an increased source/drain contact area by a formed silicided polysilicon spacer. The polysilicon sidewall spacer is formed having a height less than seventy percent of said gate conductor height, and having a continuous surface silicide layer over the deep source and drain regions. The contact area is enhanced by the silicided polysilicon spacer.
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Dyer Thomas W.
Fang Sunfei
Ku Ja-Hum
Lee Yong Meng
Cai Yuanmin
Chartered Semiconductor Manufacturing Ltd (Corporation)
Coleman W. David
DeLio & Peterson LLC
International Business Machines - Corporation
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