Silicide blocking process to form non-silicided regions on MOS d

Details Silicide blocking process to form non-silicided regions on MOS d Silicide blocking process to form non-silicided regions on MOS d

1999-02-02

2000-09-19

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438305, H01L 21336

Patent

active

061210927

ABSTRACT:
A semiconductor device is formed on a substrate having an ESD region and an internal region. A protective layer is formed over a portion of the ESD region to be protected from formation of silicide and silicide is formed on portions of the Internal and ESD region which remain unprotected by the protective layer. A portion of the protective layer is removed to form the remaining portions of the protective layer into sidewall spacers adjacent to a gate electrode included in the ESD region.

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Anderson et al., "ESD Protection for Mixed-Voltage I/O Using NMOS Transistors Stacked in a Cascade Configuration," EQS/ESD Symposium 98-61, pp. 2A.1.1-2A.1.9.

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