Silicidation and deep source-drain formation prior to source-dra

Details Silicidation and deep source-drain formation prior to source-dra Silicidation and deep source-drain formation prior to source-dra

1996-11-12

1999-12-07

Booth, Richard

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438535, H01L 21336

Patent

active

059982721

ABSTRACT:
A process in accordance with the invention minimizes the number of heat steps to which an source-drain extension region is exposed, thus minimizing source-drain extension region diffusion and allowing more precise control of source-drain extension region thickness over conventional processes. In accordance with the invention, spacers are formed abutting the gate and then heavily doped source and drain regions are formed. The gate and source and drain regions are silicided. The spacers are subsequently removed and source-drain extension regions are then formed. In one embodiment of the invention, a laser doping process is used to form the source-drain extension regions.

REFERENCES:
patent: 4366613 (1983-01-01), Ogura et al.
patent: 5270256 (1993-12-01), Bost et al.
patent: 5316969 (1994-05-01), Ishida et al.
patent: 5382534 (1995-01-01), Sheu et al.
patent: 5491099 (1996-02-01), Hsu
patent: 5780350 (1998-07-01), Kapoor
A Shallow Junction Submicrometer PMOS Process Without High-Temperature Anneals; P.G. Carey, K.H. Weiner and Thomas W. Sigmon; IEEE Electron Device Letters, vol. 9, No. 10, Oct. 1988.
Raised Source/Drain MOSFET with Dual Sidewall Spacers, M. Rodder and D. Yeakley, IEEE vol. 12, No. 3 (Mar. 1991).
Fabrication of sub-40-nm p-n junctions for 0.18 .mu.m MOS device applications, Weiner & McCarthy, SPIE V.2091 (Sep. 1993).
New Methods of Shallow Junction Formation in Silicon Using Gas Immersion Laser Doping, Ishida, SSEL (Sep. 1994).

Affiliated with

Also associated with

Rating

Silicidation and deep source-drain formation prior to source-dra does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicidation and deep source-drain formation prior to source-dra, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicidation and deep source-drain formation prior to source-dra will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-823061