Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-07-26
2011-07-26
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S618000, C438S637000, C438S792000, C438S508000
Reexamination Certificate
active
07985674
ABSTRACT:
Prior to deposition of a silicon nitride (SiN) layer on a structure, a non-plasma enhanced operation is undertaken wherein the structure is exposed to silane (SiH4) flow, reducing the overall exposure of the structure to hydrogen radicals. This results in the silicon nitride being strongly bonded to the structure and in improved performance.
REFERENCES:
patent: 6566718 (2003-05-01), Wieczorek et al.
patent: 6656840 (2003-12-01), Rajagopalan et al.
patent: 2008/0119047 (2008-05-01), Yu et al.
patent: 2008/0150137 (2008-06-01), Liu et al.
Imada Shinich
Kim Sung Jin
Ngo Minh-Van
Nickel Alexander
Pham Hieu Trung
Le Dung A.
Spansion LLC
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