Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-11-12
2010-02-16
Pert, Evan (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S157000, C257S066000, C257SE21574
Reexamination Certificate
active
07662676
ABSTRACT:
A thin film transistor (TFT) array panel with signal lines that have low resistivity is presented. The TFT array panel includes an insulating substrate, a gate line formed on the insulating substrate, a gate insulating layer formed on the gate line, a drain electrode and a data line having a source electrode formed on the gate insulating layer, the drain electrode facing the source electrode with a gap, and a pixel electrode connected to the drain electrode. In one embodiment, at least one of the gate line, the data line, and the drain electrode includes a first conductive layer made of a Mo-containing conductor, a second conductive layer made of a Cu-containing conductor, and a third conductive layer made of a MoN-containing conductor.
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patent: 4929322 (1990-05-01), Sue et al.
patent: 5844274 (1998-12-01), Tsutsumi
patent: 7220991 (2007-05-01), Hong et al.
patent: 2006/0283833 (2006-12-01), Lee et al.
Kim Shi-Yul
Park Hong-Sick
Innovation Counsel LLP
Pert Evan
Samsung Electronics Co,. Ltd.
Wilson Scott R
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