Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Patent
1998-05-27
1999-08-31
Nelms, David
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
36523006, G11C 700
Patent
active
059462434
ABSTRACT:
Driving circuits with active body pull-capability for inhibiting boost delay include main, subordinate and boosted signal lines and a first driver circuit electrically coupled to the main signal line, to drive the main signal line at a first potential (e.g., Vcc). A second driver circuit, electrically coupled to the boosted signal line, is also provided to drive the boosted signal line at a second potential (e.g., Vpp) greater than the first potential. A first field effect transistor is provided as a pull-up transistor which has a gate, drain and source electrically coupled to the main signal line, the boosted signal line and the subordinate signal line, respectively. To reduce body-bias effects which might inhibit the speed and pull-up capability of the pull-up transistor, a second field effect transistor is provided to actively pull-up the body (e.g., active region) of the pull-up transistor. This second field effect has a gate, drain and source electrically coupled to the main signal line (or boosted signal line), the boosted signal line and the body of the pull-up transistor, respectively. The second field effect transistor is designed to provide a pull-up function to the body of the pull-up transistor so that the magnitude of the reverse bias between an inversion layer channel (e.g., N-type) and the body region (e.g., P-type) of the pull-up transistor is reduced when the pull-up transistor is turned on to provide a voltage boost to the subordinate signal line. This reduction in the reverse bias results in a reduction of the body-bias effect and the increase in threshold voltage typically associated with the body-bias effect.
REFERENCES:
patent: 5265052 (1993-11-01), D'Arrigo et al.
patent: 5295106 (1994-03-01), Jinbo
patent: 5297104 (1994-03-01), Nakashima
patent: 5467032 (1995-11-01), Lee
patent: 5654920 (1997-08-01), Watsuji et al.
Ho Hoai V.
Nelms David
Samsung Electronics Co,. Ltd.
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