SiGe rectification process

Details SiGe rectification process SiGe rectification process

2006-04-04

2006-04-04

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Plural fluid growth steps with intervening diverse operation

C438S496000, C438S507000, C438S770000

Reexamination Certificate

active

07022593

ABSTRACT:
A method for forming strain-relaxed SiGe films comprises depositing a graded strained SiGe layer on a substrate in which the concentration of Ge is greater at the interface with the substrate than at the top of the layer. The strained SiGe film is subsequently oxidized, producing a strain-relaxed SiGe film with a substantially uniform Ge concentration across the thickness of the film. The relaxed SiGe layer may be used to form a strained silicon layer on a substrate.

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