Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-04-16
2000-06-13
Meier, Stephen D.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438639, 438640, 438670, 438740, 438638, H01L 214763
Patent
active
060749431
ABSTRACT:
A structure and method to direct the via 270 etch to the top of the interconnect 210, by using a sidewall layer 240, preferably TiN, and thus preventing the etching down the side of the interconnect 210 and exposure of materials residing between the interconnects 210.
REFERENCES:
patent: 5321211 (1994-06-01), Haslam et al.
patent: 5641708 (1997-06-01), Sardella et al.
patent: 5756396 (1998-05-01), Lee et al.
patent: 5827437 (1998-10-01), Yang et al.
Aldrich David B.
Brennan Kenneth D.
McAnally Peter S.
Zielinski Eden M.
Duong Khanh
Hoel Carlton H.
Meier Stephen D.
Telecky Jr. Frederick J.
Texas Instruments Incorporated
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