Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1996-10-15
1997-11-25
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257283, 257301, 257344, 257900, 437 61, 437 72, H01L 2980, H01L 31112
Patent
active
056915497
ABSTRACT:
The present invention is a sidewall connector providing a conductive path linking at least two conductive regions. The sidewall connector has a top portion comprising surface. A conductive member contacts the top portion, connecting the rail to a conductive region or to an external conductor. An etch stop layer located on a conductive region can be used to protect the conductive region during the directional etch to form the sidewall connector. A conductive bridge is then used to link exposed portions of the conductive region and the conductive sidewall rail, the conductive bridge extending across the thickness of the etch stop layer. A "T" connector is formed by the process, starting with a pair of intersecting sidewalls wherein the two sidewalls have top edges at different heights where they intersect. The connector is used to form a strap for a DRAM cell.
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Adler Eric
Kenney Donald McAlpine
Lam Chung Hon
Nakos James S.
International Business Machines - Corporation
Leas James M.
Ostrowski David
Thomas Tom
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