Sidewall spacer for semiconductor device and fabrication...

Details Sidewall spacer for semiconductor device and fabrication... Sidewall spacer for semiconductor device and fabrication...

2007-05-22

2007-05-22

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C257SE21131

Reexamination Certificate

active

10821438

ABSTRACT:
An offset spacer layer for an LDD ion implantation process is formed by blanket deposition without photolithography and dry etch processes. The offset spacer layer remaining on LDD regions during an ion implantation process prevents a substrate from silicon loss and dosage contamination and has densified characteristics to improve device reliability.

REFERENCES:
patent: 5981325 (1999-11-01), Hung
patent: 6121099 (2000-09-01), Fulford, Jr. et al.
patent: 6140203 (2000-10-01), Schuegraf et al.
patent: 6187645 (2001-02-01), Lin et al.
patent: 6423632 (2002-07-01), Samavedam et al.
patent: 6498067 (2002-12-01), Perng et al.
patent: 6528402 (2003-03-01), Tseng
China Office Action issued May 19, 2006.

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