SiC semiconductor device comprising a pn junction with a voltage

Details SiC semiconductor device comprising a pn junction with a voltage SiC semiconductor device comprising a pn junction with a voltage

1995-08-30

1999-10-19

Niebling, John

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Plural fluid growth steps with intervening diverse operation

438495, 438931, H01L 2120

Patent

active

059677953

ABSTRACT:
A semiconductor component comprises a pn junction in which both the p-conducting and the n-conducting layers of the pn junction are doped silicon carbide layers and the edge of at least one of the conducting layers of the pn junction exhibits a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the defined working junction to a zero or almost zero total charge at the outermost edge of the junction following a radial direction from the central part of the junction towards its outermost edge.

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Neudeck et al., 2000 V 6H-SiC P-N Junction Diodes Grown By Chemical Vapor Deposition, Appl. Phys. Lett. 64 (11), Mar. 14, 1994, pp. 1386-1388.
Bhatnagar et al., Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices, IEEE Transactions on Electron Devices, vol. 40, No. 3, Mar. 1993.

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