SiC semiconductor device comprising a pn junction with a voltage

Details SiC semiconductor device comprising a pn junction with a voltage SiC semiconductor device comprising a pn junction with a voltage

1996-07-16

1999-12-14

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

With electric field controlling semiconductor layer having a...

257487, 257 77, H01L 2358

Patent

active

060021594

ABSTRACT:
A semiconductor component including a silicon carbide substrate. A pn junction includes doped layers of the substrate. The pn junction includes at a surface of the substrate a low doped first conductivity type layer and at a portion of the surface of the substrate a highly doped second conductivity type layer. An edge termination region of the pn junction laterally surrounds the pn junction provided at an edge of at least one of the layers of the pn junction. The edge termination region includes zones of the second conductivity type located at an edge of the highly doped second conductivity type layer. A charge content of the zones decreases toward an edge of the edge termination region in accordance with at least one characteristic selected from the group consisting of a stepwise or continuously decreasing total charge towards an outer border of the edge termination region and a decreasing effective sheet charge density toward an outer border of the edge termination region. An outermost zone of the edge termination region is completely depleted at full design voltage.

REFERENCES:
patent: 4573066 (1986-02-01), Whight
patent: 4648174 (1987-03-01), Temple et al.
patent: 4667393 (1987-05-01), Ferla et al.
patent: 4672738 (1987-06-01), Stengl et al.
patent: 4927772 (1990-05-01), Arthur et al.
patent: 4947218 (1990-08-01), Edmond et al.
patent: 5233215 (1993-08-01), Baliga
R. Stengl, et al., "Variation of Lateral Doping--A New Concept to Avoid High Voltage Breakdown of Planar Junctions," IEDM, Dec. 1985, pp. 154-157.
Neudeck et al., 2000 V 6H-SiC P-N Junction Diodes Grown By Chemical Vapor Deposition, Appl. Phys. Lett. 64 (11), Mar. 14, 1994, pp. 1386-1388.
Bhatnagar et al., Comparison of 6H-SiC, 3C-SiC, and Si For Power Devices, IEEE Transactions on Electron Devices, vol. 40, No. 3, Mar. 1993, pp. 645-655.

Affiliated with

Also associated with

Rating

SiC semiconductor device comprising a pn junction with a voltage does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with SiC semiconductor device comprising a pn junction with a voltage, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and SiC semiconductor device comprising a pn junction with a voltage will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-866006