SI trench between bitline HDP for BVDSS improvement

Details SI trench between bitline HDP for BVDSS improvement SI trench between bitline HDP for BVDSS improvement

2011-05-31

2011-05-31

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21657, C257SE21658

Reexamination Certificate

active

07951675

ABSTRACT:
Memory devices having improved BVdss characteristics and methods of making the memory devices are provided. The memory devices contain bitline dielectrics on bitlines of a semiconductor substrate; first spacers adjacent the side surfaces of the bitline dielectrics and on the upper surface of the semiconductor substrate; a trench in the semiconductor substrate between the first spacers; and second spacers adjacent the side surfaces of the trench. By containing the trench and the first and second spacers between the bitlines, the memory device can improve the electrical isolation between the bitlines, thereby preventing and/or mitigating bitline-to-bitline current leakage and increasing BVdss.

REFERENCES:
patent: 2006/0211188 (2006-09-01), Lusky et al.
patent: 2007/0054463 (2007-03-01), Ogawa
patent: 2008/0128774 (2008-06-01), Irani et al.

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