Si nanowire substrate, method of manufacturing the same, and...

Details Si nanowire substrate, method of manufacturing the same, and... Si nanowire substrate, method of manufacturing the same, and...

2007-11-20

2007-11-20

Elms, Richard T. (Department: 2824)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C977S762000, C977S814000, C977S900000, C977S938000

Reexamination Certificate

active

11341519

ABSTRACT:
A silicon nanowire substrate having a structure in which a silicon nanowire film having a fine line-width is formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the silicon nanowire substrate includes preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.

REFERENCES:
patent: 7109072 (2006-09-01), Saito et al.
patent: 2004/0005747 (2004-01-01), Park et al.

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