Si device making method by using a novel material for...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

Reexamination Certificate

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C430S005000, C430S273100, C430S312000, C430S322000, C430S325000, C430S330000, C430S331000, C430S394000, C430S913000, C430S927000

Reexamination Certificate

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08039195

ABSTRACT:
A method of lithography patterning includes forming a resist pattern on a substrate, the resist pattern including at least one desired opening and at least one padding opening therein on the substrate; forming a patterned photosensitive material layer on the resist pattern and the substrate, wherein the patterned photosensitive material layer covers the padding opening of the resist pattern; and applying a resolution enhancement lithography by assist of chemical shrink (RELACS) process to the desired opening of the resist pattern.

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Chinese Patent Office, Office Action mailed Apr. 8, 2010, Application No. 200910005762.X, 4 pages.

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