Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame
Reexamination Certificate
2005-12-27
2005-12-27
Schillinger, Laura M. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
C257S672000, C257S673000, C257S674000
Reexamination Certificate
active
06979886
ABSTRACT:
A short-prevented lead frame and a method for fabricating a semiconductor package with the lead frame are proposed, wherein each lead of the lead frame is formed with a thickness-reduced portion at a peripheral position of the lead frame, allowing thickness-reduced portions of adjacent leads to be arranged in a stagger manner. This stagger arrangement significantly increases pitches between the neighboring thickness-reduced portions of leads. Therefore, during a singulation process as to cut through the leads, lead bridging and short-circuiting between adjacent leads caused by cut-side burrs can be prevented from occurrence, whereby singulation quality and product yield and reliability are effectively improved.
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Hsu Chin-Teng
Hung Jui-Hsiang
Yang Cheng-Hsiung
Yang Chih-Jen
Corless Peter F.
Edwards Angell Palmer & Dodge
Jensen Steven M.
Mitchell James
Schillinger Laura M.
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