Short channel semiconductor device fabrication

Details Short channel semiconductor device fabrication Short channel semiconductor device fabrication

2007-08-07

2007-08-07

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S157000, C438S283000

Reexamination Certificate

active

11152596

ABSTRACT:
The formation of one or more accumulation mode multi gate transistor devices is disclosed. The devices are formed so that short channel effects are mitigated. In particular, one more types of dopant materials are implanted in a channel region, an extension region and/or source/drain regions to mitigate the establishment of a conduction path and the accumulation of electrons in the channel region that can result in an unwanted leakage current.

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