Short channel lateral MOSFET and method

Details Short channel lateral MOSFET and method Short channel lateral MOSFET and method

2008-04-30

2010-12-14

Nguyen, Dao H (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S270000, C438S276000, C438S289000, C438S301000, C257S335000, C257S343000, C257S492000, C257S493000, C257SE21214, C257SE21417, C257SE21427, C257SE29040, C257SE29266, C257SE29268

Reexamination Certificate

active

07851314

ABSTRACT:
A short channel Lateral MOSFET (LMOS) and method are disclosed with interpenetrating drain-body protrusions (IDBP) for reducing channel-on resistance while maintaining high punch-through voltage. The LMOS includes lower device bulk layer; upper source and upper drain region both located atop lower device bulk layer; both upper source and upper drain region are in contact with an intervening upper body region atop lower device bulk layer; both upper drain and upper body region are shaped to form a drain-body interface; the drain-body interface has an IDBP structure with a surface drain protrusion lying atop a buried body protrusion while revealing a top body surface area of the upper body region; gate oxide-gate electrode bi-layer disposed atop the upper body region forming an LMOS with a short channel length defined by the horizontal length of the top body surface area delineated between the upper source region and the upper drain region.

REFERENCES:
patent: 7514329 (2009-04-01), Pendharkar et al.
patent: 2010/0237416 (2010-09-01), Hebert

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