Shield configuration for vacuum chamber

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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Details

20419213, 20429803, 20429809, 20429811, 118641, 118724, C23C 1434

Patent

active

055185932

ABSTRACT:
A shield in a PVD vacuum processing chamber having a configuration which minimizes or eliminates particulates originating from flaking or peeling off from the shield and from arcing between the biased target and surrounding grounded pieces is disclosed. The shield has an "h" cross section with the lower arch of the "h" facing a heater assembly which heats the shield to a temperature approximately equivalent to the temperature of the sputter deposited material. The surface of the shield is polished to promote the release of H.sub.2 O molecules from its surface during the time when a vacuum is initially being pumped. The inside surface of the shield (facing a heater assembly) is treated to have a higher coefficient of surface emissivity than the outer surface to retain more energy and provide more efficient heating. A shadow frame which spans the gap between the edge of the shield and the edge of the substrate being processed is indirectly heated by having a portion of its surface facing a matching portion of the shield, both portions having high emissivities. The shield is supported in the vacuum chamber and the shadow frame on the shield by a series of knife edge support assemblies.

REFERENCES:
patent: 4933063 (1990-06-01), Katsura et al.
patent: 5135629 (1992-08-01), Sawada et al.
patent: 5202008 (1993-04-01), Talieh et al.
patent: 5240580 (1993-08-01), Henderson et al.

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