Shield and collimator pasting deposition chamber with a side poc

Details Shield and collimator pasting deposition chamber with a side poc Shield and collimator pasting deposition chamber with a side poc

1993-09-17

1995-01-17

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429811, 20429825, 20429826, C23C 1434, C23C 1435

Patent

active

053823397

ABSTRACT:
A deposition chamber used in the physical vapor deposition of wafers has a side pocket for pasting the bottom of a collimator. To prolong the useful life of a collimator it is rotated into the side pocket and the bottom is pasted with a pasting material which is resistant to cracking and flaking. A series of wafers are cycled through the deposition chamber. While each wafer is in the deposition chamber a deposition material is sputtered onto its surface. After a predetermined number of wafers are sputtered in the deposition chamber a pasting cycle is run. During the pasting cycle, a pasting material is sputtered over the deposition chamber and the top of the collimator. The collimator is then moved into the side pocket of the deposition chamber and a pasting material is sputtered from a second target over the bottom of the collimator. The pasting material serves to resist cracking and flaking of the deposition material and thus prolongs the useful life of the shields in the deposition chamber and the collimator.

REFERENCES:
patent: 4410407 (1983-10-01), Macaulay
patent: 4824544 (1989-04-01), Mikalesen et al.
patent: 4986890 (1991-01-01), Setoyama et al.
patent: 5065698 (1991-11-01), Koike
patent: 5202008 (1993-04-01), Talich et al.
patent: 5223108 (1993-06-01), Hurwitt

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