Shapes-based migration of aluminum designs to copper damascence

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S631000, C438S633000, C438S637000

Reexamination Certificate

active

06992002

ABSTRACT:
An interconnect structure for use in semiconductor devices which interconnects a plurality of dissimilar metal wiring layers, which are connected vias, by incorporating shaped voids in the metal layers. The invention also discloses a method by which such structures are constructed.

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