Shallow trench type quadri-cell of phase-change random...

Details Shallow trench type quadri-cell of phase-change random... Shallow trench type quadri-cell of phase-change random...

2009-04-09

2011-12-13

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C257S002000, C257SE47001, C257SE21090, C257SE21001, C438S102000, C438S382000

Reexamination Certificate

active

08077504

ABSTRACT:
A method of forming a phase-change random access memory (PRAM) cell and PRAM arrangement, and embodiments of phase-change random access memory (PRAM) cells and PRAM arrangements are disclosed. A phase-change random access memory (PRAM) cell includes a bottom electrode, a heater resistor coupled to the bottom electrode, a phase change material (PCM) coupled to the heater resistor, and a top electrode coupled to the phase change material. An active region between the heater resistor and the phase change material is defined by a thickness of the heater resistor.

REFERENCES:
patent: 2006/0208847 (2006-09-01), Lankhorst et al.
patent: 2007/0025226 (2007-02-01), Park et al.
patent: 2009/0011539 (2009-01-01), Jeng et al.
patent: 2009/0026436 (2009-01-01), Song et al.
patent: WO2007031536 (2007-03-01), None
International Search Report and Written Opinion—PCT/US2010/030572—International Search Authority, European Patent Office,Jan. 5, 2011.

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