Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1997-12-18
2000-10-10
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257513, H01L 2900
Patent
active
061304670
ABSTRACT:
An insulated trench isolation structure is formed in a semiconductor substrate with an oxide or nitride spacer overlying and protecting a portion of a pad oxide layer at the trench edge such that the pad oxide layer acts as part of the gate oxide layer. Embodiments include providing a step between the trench fill and the pad oxide layer and forming the protective spacer thereon. The protective spacer protects the underlying portion of the pad oxide layer at the trench edge during pad oxide removal prior to forming a gate oxide. Therefore, it is only necessary to grow the gate oxide on the main surface of the substrate, not at the trench edges. The gate oxide can then be formed uniformly thin, while the remaining pad oxide at the trench edges is relatively thick.
REFERENCES:
patent: 4729002 (1988-03-01), Yamazahi
patent: 5433794 (1995-07-01), Fazan et al.
patent: 5436488 (1995-07-01), Poon et al.
patent: 5868870 (1999-02-01), Fazan et al.
Bandyopadhyay Basab
Ibok Effiong
Karlsson Olov
Kepler Nick
Lyons Christopher F.
Advanced Micro Devices , Inc.
Prenty Mark V.
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