Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-08-29
2006-08-29
Chen, Jack (Department: 2813)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S435000
Reexamination Certificate
active
07098116
ABSTRACT:
A method of reducing oxide thickness variations in a STI pattern that includes both a dense trench array and a wide trench is described. A first HDP CVD step with a deposition/sputter (D/S) ratio of 9.5 is used to deposit a dielectric layer with a thickness that is 120 to 130% of the shallow trench depth. An etch back is performed in the same CVD chamber with NF3, SiF4or NF3and SiF4to remove about 40 to 50% of the initial dielectric layer. A second HDP CVD step with a D/S ratio of 16 deposits an additional thickness of dielectric layer to a level that is slightly higher than after the first deposition. The etch back and second deposition form a smoother dielectric layer surface which enables a subsequent planarization step to provide filled STI features with a minimal amount of dishing in wide trenches.
REFERENCES:
patent: 5494857 (1996-02-01), Cooperman et al.
patent: 6211040 (2001-04-01), Liu et al.
patent: 6232043 (2001-05-01), Lin et al.
patent: 6242322 (2001-06-01), Chen et al.
patent: 6258692 (2001-07-01), Chu et al.
patent: 6261957 (2001-07-01), Jang et al.
patent: 6319796 (2001-11-01), Laparra et al.
patent: 6573152 (2003-06-01), Fazio et al.
Fu Chu-Yun
Hou Chuan-Ping
Lu Chih-Cheng
Ming Jang Syun
Wen Chang
Chen Jack
Haynes and Boone LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
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