Shallow trench isolation in floating gate devices

Details Shallow trench isolation in floating gate devices Shallow trench isolation in floating gate devices

2003-10-31

2008-09-02

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21179

Reexamination Certificate

active

07419875

ABSTRACT:
The present invention provides a method for manufacturing a floating gate type semiconductor device on a substrate having a surface (2), and a device thus manufactured. The method comprises:—forming, on the substrate surface, a stack comprising an insulating film (4), a first layer of floating gate material (6) and a layer of sacrificial material (8),—forming at least one isolation zone (18) through the stack and into the substrate (2), the first layer of floating gate material (6) thereby having a top surface and side walls (26),—removing the sacrificial material (8), thus leaving a cavity (20) defined by the isolation zones (18) and the top surface of the first layer of floating gate material (6), and filling the cavity (20) with a second layer of floating gate material (22), the first layer of floating gate material (6) and the second layer of floating gate material (22) thus forming together a floating-gate (24).

REFERENCES:
patent: 6222225 (2001-04-01), Nakamura et al.
patent: 6391722 (2002-05-01), Koh
patent: 2002/0093073 (2002-07-01), Mori et al.

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