Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-08-21
2007-08-21
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S217000, C438S224000, C438S529000
Reexamination Certificate
active
10828887
ABSTRACT:
A method is described to fabricate a MOSFET device with increased threshold voltage stability. After the pad oxide and pad nitride are deposited on the silicon substrate and shallow trenches are patterned and the pad nitride removed. As+or P+species are then implanted using low energy ions of approximately 5 keV into the pad oxide. Conventional As+or P+implant follows the shallow implant to form the n-wells. With this procedure of forming a sacrificial shallow implantation oxide layer, surface dopant concentration variation at pad oxide:silicon substrate interface is minimized; and threshold voltage stability variation of the device is significantly decreased.
REFERENCES:
patent: 4154626 (1979-05-01), Joy et al.
patent: 5478762 (1995-12-01), Chao
patent: 6177333 (2001-01-01), Rhodes
patent: 6468849 (2002-10-01), Efland et al.
patent: 2001/0021545 (2001-09-01), Houlihan et al.
patent: 2002/0179997 (2002-12-01), Goth et al.
patent: 2004/0018737 (2004-01-01), Kwak
patent: 2004/0033658 (2004-02-01), Cho et al.
Benistant Francis
Li Yisuo
Lun Zhao
Sik Kim Hyun
Ackerman Stephen B.
Chartered Semiconductor Manufacturing Ltd.
Saile Akerman LLC
Smith Zandra V.
Thomas Toniae M
LandOfFree
Shallow low energy ion implantation into pad oxide for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Shallow low energy ion implantation into pad oxide for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Shallow low energy ion implantation into pad oxide for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3847339