Shadow mask and method for producing a shadow mask

Details Shadow mask and method for producing a shadow mask Shadow mask and method for producing a shadow mask

2007-02-27

2007-02-27

Letscher, Geraldine (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S311000, C430S312000, C430S313000, C430S007000

Reexamination Certificate

active

10344710

ABSTRACT:
The disclosed device is directed towards a shadow mask for ion beams comprising a silicon wafer with a hole pattern arranged therein, wherein the silicon wafer is provided at a side confronting the incident ion beams with a metallic coating which stops the ion beams and dissipates heat, wherein an apertured region of the silicon wafer has a thickness from about 20 μm to about 200 μm and apertures in the shadow mask have lateral dimensions from about 0.5 μm to about 3 μm.

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