SF6/nitriding gas/oxidizer plasma etch system

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156646, 156653, 156657, 1566591, 156662, 20419237, 252 791, B44C 122, C03C 1500, C03C 2506, H01L 21306

Patent

active

046157646

ABSTRACT:
A gaseous mixture of SF.sub.6, a nitriding gas component and an oxidizer gas component is disclosed as an effective SiO.sub.2 etchant having enhanced selectively for use in either the plasma or reactive ion etch process. By adding an oxidizing gas to the SF.sub.6 nitriding gas plasma etchant, the selectively for SiO.sub.2 over silicon or polysilicon is marked improved. The optional addition of an inert diluent gas did not substantially change these results.

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