Sequential selective epitaxial growth

Details Sequential selective epitaxial growth Sequential selective epitaxial growth

2007-01-30

2010-10-05

Potter, Roy K (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S489000

Reexamination Certificate

active

07807523

ABSTRACT:
By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. A multi step epitaxial process can be used to extend the ridges with different dopant types, high mobility semiconductor, and or advanced multi-layer strutures. For CMOS integrated circuits a capping layer is formed over the a first region. Epitaxial layers are formed in a second region. Then the capping layer is removed from the first region and a capping layer is formed over the second region. Epitaxial layers can than be formed in the first region.

REFERENCES:
patent: 6171935 (2001-01-01), Nance et al.
patent: 6323103 (2001-11-01), Rengarajan et al.
patent: 6995054 (2006-02-01), Oda et al.

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