Sequential deposition of tantalum nitride using a...

Details Sequential deposition of tantalum nitride using a... Sequential deposition of tantalum nitride using a...

2005-12-06

2005-12-06

Kennedy, Jennifer M. (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S627000

Reexamination Certificate

active

06972267

ABSTRACT:
Disclosed is a method and apparatus that features deposition of tantalum films employing sequential deposition techniques, such as Atomic Layer Deposition (ALD). The method includes serially exposing a substrate to a flow of a nitrogen-containing gas, such as ammonia NH3, and a tantalum containing gas. The tantalum-containing gas is formed from a precursor, (tBuN)Ta(NEt2)3(TBTDET), which is adsorbed onto the substrate. Prior to adsorption of TBTDET onto the substrate layer, the TBTDET precursor is heated within a predefined temperature range.

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