Sequence control circuit

Electrical computers and digital processing systems: processing – Processing control – Branching

Reexamination Certificate

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Details

C712S212000, C712S245000, C714S718000

Reexamination Certificate

active

06421773

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a sequence control circuit, in particular to a sequence control circuit to be preferably used in a test pattern generator of a semiconductor memory test apparatus.
2. Description of the Prior Art
A memory test apparatus is used for testing a semiconductor memory device. The memory test apparatus gives an address, data and a control signal to a memory under test (MUT) based on a predetermined test program, that is, a pattern program, and discriminates PASS/FAIL of the MUT by judging whether or not the data then read from the MUT agree with the expectation data at a predetermined timing. When address signals, test data signals and control signals are supplied to the MUT, the expectation data is considered to mean the data to be outputted from the normal MUT corresponding to a combination of the above address signals, test data signals and control signals.
FIG. 1
is a block diagram showing a basic whole structure of a conventional memory test apparatus which has been used. The memory test apparatus
1
performs a test of MUT
2
and comprises: a timing generator
5
for generating a reference clock; a test pattern generator
6
for generating address signals, test data signals and control signals to be given to the MUT
2
by receiving the reference clock; a waveform shaper
7
for receiving the respective signals from the test pattern generator
6
and applying these signals to the MUT
2
after shaping them into waveforms required for the test; and a logic comparator
8
for receiving the data read from the MUT
2
and judging PASS/FAIL; of the expectation data.
The test pattern generator
6
produces expectation data in addition to the address signals, test data signals and control signals. The expectation data is supplied to the logic comparator
8
from the test pattern generator
6
. The logic comparator
8
compares the expectation data with a data read from MUT
2
, performs quality judgment of the MUT according to match/mismatch of the data and outputs the result as a PASS/FAIL signal to the test pattern generator
6
. Further, when the logic comparator
8
Compares the output data of the MUT
2
with the expectation data in a specific cycle of test cycles and detects the agreement between the two, the logic comparator
8
outputs a match flag MFLG to the test pattern generator
6
. Here, a series of an address, test data and a control signal to be given to the MUT
2
is called as a test pattern.
Now, the test pattern generator
6
has an address generator
11
, a test data generator
12
and a control signal generator
13
which generates the address signals, the test data and the control signals to be given to the MUT
2
, respectively, and further has a sequence control circuit
10
which controls the address generator
11
, the test data generator
12
and the control signal generator
13
.
FIG. 2
is a block diagram showing an example of an internal structure of a conventional sequence control circuit.
The sequence control circuit comprises: an instruction memory
121
for storing a test program consisting of a series of instructions for generating a test pattern; a program counter (PC)
122
for designating an address of the instruction memory
121
; a stack register
123
for temporary saving of addresses; a program counter controller
124
for controlling the program counter
122
and the stack register
123
; a starting address register (STA)
125
for storing an initial value of the program counter
122
; a branch address register (BAR)
126
for storing an address of a branch designated by branch instructions; an index register
127
; an index work register
128
; and an index counter
129
. The index register
127
, the index work register
128
and the index counter
129
are all for controlling loop instructions.
Every one of instructions to be stored in the instruction memory
121
is composed of an operation code part, that is, an operation code part of a sequence control instruction, and an operand corresponding to each instruction code. Corresponding to these instructions, the instruction memory
121
has a pair of a sequence control instruction area for storing the operation code part and an operand storing area for storing the operand. In case of a sequence control circuit of this type, there is an operand of a type which expresses a designated branch address or loop conditions in a test program or of a type which describes a parameter for generating an address, test data and a control signal to be given to the MUT
2
. Accordingly, this sequence control circuit has, in addition to the above sequence control instruction area, an address operation area, a data operation area and a control, signal generation instruction area provided in a memory area of each address of instruction memory
121
. The address operation area, the data operation area and the control signal generation instruction area are provided in the operand storing area.
When the instruction memory
121
is accessed by the address outputted from the program counter
122
, instructions for address generation, test data generation and control signal generation are read from the address operation area, the data operation area and the control signal generation instruction area and then supplied to the address generator
11
(FIG.
1
), the test data generator
12
(
FIG. 1
) and the control signal generator
13
(FIG.
1
), respectively. Thus, the address generator
11
, the test data generator
12
and the control signal generator
13
generate an address, test data and a control signal for the MUT
2
, respectively.
The program counter controller
124
receives an operation code part of sequence control instructions from the instruction memory
121
, a match flag MFLG from the logic comparator
8
(
FIG. 1
) and an output of the index counter
129
. Based on the result obtained by decoding the instruction stored in the instruction memory
121
, on the match flag MFLG, and on an output from the index counter
129
, the program counter controller
124
controls the program counter
122
and the stack register
123
. In the concrete, the program counter controller
124
handles a content of the program counter
122
, that is, the value showing an address to be read next in the instruction memory
121
, through increment, decrement or hold operation, and loads the value to the program counter
122
. For loading the above value to the program counter
122
, the program counter controller
124
arranges corresponding to the instructions read out so that any one of (i) an operand of instructions for a present address of the instruction memory
121
, (ii) a content of the starting address register
125
, (iii) a content of the branch address register
126
, and (iv) a content of the stack register
123
is set to the program counter
122
as the value.
An address read from the operand storing area of the instruction memory
121
is also supplied to the index register
127
. The index counter
129
controls loop instructions by using this index register
127
and the index work register
128
which serves as a work register, and when the counter value coincides with a specific value, outputs the value to the program counter controller
124
thereby controlling the program counter
122
.
Now in recent years, a semiconductor memory called a flash memory has been developed and manufactured. The flash memory has a merit that it is a non-volatile memory and hence it can hold memory data without particular power supply from outside and can rewrite data stored in the memory in a state as it mounted on a printed wiring substrate. Characteristics of the operation of the flash memory are summarized in the following six items.
(1) operation mode setting by command input,
(2) automatic write,
(3) automatic erase (chip erase/block erase),
(4) detection of data write completion/erase completion,
(5) block protection function,
(6) device code.
Therefore, it is possible to set automatic erasing activity to be performed by a c

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