Separation methods for semiconductor charge accumulation...

Details Separation methods for semiconductor charge accumulation... Separation methods for semiconductor charge accumulation...

2011-08-23

2011-08-23

Lee, Cheung (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S128000, C438S261000, C438S637000, C257SE21180, C257SE21210

Reexamination Certificate

active

08003468

ABSTRACT:
Devices and methods for isolating adjacent charge accumulation layers in a semiconductor device are disclosed. In one embodiment, a semiconductor device comprises a bit line formed in a semiconductor substrate, a charge accumulation layer formed on the semiconductor substrate, a word line formed on the charge accumulation layer across the bit line, and a channel region formed in the semiconductor substrate below the word line and between the bit line and its adjacent bit line. For the semiconductor device, the charge accumulation layer is formed above the channel region in a widthwise direction of the word line, and a width of the word line is set to be narrower than a distance between an end of the channel region and a central part of the channel region in a lengthwise direction of the word line.

REFERENCES:
patent: 2008/0239789 (2008-10-01), Shino et al.

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