Separate injection of reactive species in selective...

Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate

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C427S255280

Reexamination Certificate

active

07655543

ABSTRACT:
Methods and apparatuses for selective epitaxial formation of films separately inject reactive species into a CVD chamber. The methods are particularly useful for selective deposition using volatile combinations of precursors and etchants. Formation processes include simultaneous supply of precursors and etchants for selective deposition, or sequential supply for cyclical blanket deposition and selective etching. In either case, precursors and etchants are provided along separate flow paths that intersect in the relatively open reaction space, rather than in more confined upstream locations.

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