Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-12-19
2006-12-19
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S253000
Reexamination Certificate
active
07151301
ABSTRACT:
There is provided a biomolecule FET enhancing a sensitivity. The biomolecule FET includes a substrate, first and second impurity regions formed on both sides of the substrate, and doped with impurities of a polarity opposite to that of the substrate, a gate formed on the substrate and being in contact with the first and second impurity regions, and a probe biomolecule attached to the gate. A region of the gate adjacent to the first impurity region is wider than a region thereof adjacent to the second impurity region. A density of the probe biomolecule attached to the surface of the gate is increased, and when detecting a level of hybridization of the probe biomolecule and the target biomolecule, its sensitivity is improved.
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European Search Report; Application No. 0500298.0—2204 PCT/; Date of Completion: Jul. 6, 2005.
Kim Joon-ho
Lim Geun-bae
Namkoong Kak
Yoo Kyu-tae
Cantor & Colburn LLP
Lee Eugene
Samsung Electronics Co,. Ltd.
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