Sensitive positive electron beam resists

Details Sensitive positive electron beam resists Sensitive positive electron beam resists

1984-02-13

1984-10-09

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430296, 430327, 430330, 430270, B05D 302, G03C 516, G03C 524

Patent

active

044762178

ABSTRACT:
Highly sensitive positive electron beam resists comprised of copolymers of methacrylic acid (MAA) and t-butyl methacrylate (TBM) are disclosed in which a thin film of high molecular weight MAA/TBM copolymer is applied to a suitable substrate. Prior to exposure, the copolymer is prebaked at a temperature below the decomposition temperature to improve the sensitivity and resolution of the resist. The exposed resist is developed by spraying with a suitable solvent. The positive electron resists produced in accordance with the present invention exhibit a high sensitivity and good submicron resolution.

REFERENCES:
patent: 3914462 (1975-10-01), Morishita et al.
patent: 3984582 (1976-10-01), Feder et al.
patent: 4011351 (1977-03-01), Gipstein et al.
patent: 4087569 (1978-05-01), Hatzakis

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