Sensing of memory integrated circuits

Details Sensing of memory integrated circuits Sensing of memory integrated circuits

2005-06-07

2005-06-07

Nguyen, Viet Q. (Department: 2818)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S210130, C365S149000, C365S202000, C365S205000, C365S203000, C365S196000

Reexamination Certificate

active

06903959

ABSTRACT:
A memory IC having improved sensing during reads is disclosed. The IC includes the use of first and second reference voltages for sensing to compensate for asymmetry that exists between cells on bitline true and bitline complement. The first reference voltage is used for sensing a cell on bitline true while the second reference voltage is used for sensing a cell on bitline complement.

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