4. Semiconductor device manufacturing: process
  5. Formation of electrically isolated lateral semiconductive...
  6. Grooved and refilled with deposited dielectric material

Joerg Wohlfahrt

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2T2C signal margin test mode using a defined charge and...

Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate

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2T2C signal margin test mode using resistive element

Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate

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FeRAM memory device

Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate

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Memory architecture

Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate

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Memory architecture with series grouped by cells

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate

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Profile ID: LFUS-PAI-P-2529920

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