Sensing method and apparatus for resistance memory device

Details Sensing method and apparatus for resistance memory device Sensing method and apparatus for resistance memory device

2005-02-22

2005-02-22

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Resistive

C365S158000

Reexamination Certificate

active

06859383

ABSTRACT:
An MRAM memory integrated circuit is disclosed. Resistance, and hence logic state, is determined by discharging a first charged capacitor through an unknown cell resistive element to be sensed at a fixed voltage, and a pair of reference capacitors. The rate at which the parallel combination of capacitors discharge is between the discharge rate associated with a binary ‘1’ and ‘0’ value, and thus offers a reference for comparison.

REFERENCES:
patent: 6128239 (2000-10-01), Perner
patent: 6256247 (2001-07-01), Perner
patent: 6317376 (2001-11-01), Tran et al.
patent: 6462982 (2002-10-01), Numata et al.
patent: 6590804 (2003-07-01), Perner
patent: 6597598 (2003-07-01), Tran et al.
patent: 6693826 (2004-02-01), Black et al.

Affiliated with

Also associated with

Rating

Sensing method and apparatus for resistance memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sensing method and apparatus for resistance memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sensing method and apparatus for resistance memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3495859