Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2005-02-08

2005-02-08

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S371000, C257S339000, C257S500000

Reexamination Certificate

active

06853038

ABSTRACT:
A semiconductor device and a method for manufacturing the same are provided having a high breakdown voltage transistor and a low breakdown voltage transistor with different driving voltages in a common substrate. The semiconductor device includes: a semiconductor substrate of a first conductivity type; a first well of a second conductivity type formed in the semiconductor substrate; a second well of the first conductivity type formed within the first well; a third well of the second conductivity type formed within the first well; a low breakdown voltage transistor of the second conductivity type formed at the second well; a low breakdown voltage transistor of the first conductivity type formed at the third well; and a high breakdown voltage transistor of the first conductivity type formed at the first well. The second well and the third well have an impurity concentration higher than an impurity concentration of the first well.

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