Sense/write circuits for bipolar random access memory

Details Sense/write circuits for bipolar random access memory Sense/write circuits for bipolar random access memory

1976-01-02

1978-03-07

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Having particular data buffer or latch

365205, 307238, G11C 1140

Patent

active

040782611

ABSTRACT:
A bipolar sense-write circuit is provided for sensing voltage levels representative of a logical "1" or a logical "0" stored in a flip-flop storage cell and for writing voltage levels into the flip-flop storage cell. The sense portion of the sense-write circuit is essentially independent of the write portion thereof. The sense circuitry portion of the sense-write circuit includes circuitry for biasing a pair of bit lines at substantially equal voltages at all times, except during a write cycle, to a voltage which facilitates sensing of a selected storage cell and which also results in the write circuitry being essentially electrically isolated from the sense-bit lines during a read cycle. During a write cycle, the read circuitry is effectively disabled so that the bit lines are at voltages determined by the write circuitry, and the read circuitry is effectively isolated from the sense-bit lines during the write cycle, and the write circuitry applies an increased voltage to one of the sense-bit conductors. The independence of the sense portion and write portion of the sense-write circuits results in elimination of undesirable interaction, especially write recovery problems, between the write and sense portions.

REFERENCES:
patent: 3983544 (1976-09-01), Dennison

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