Sense circuit for resistive memory

Details Sense circuit for resistive memory Sense circuit for resistive memory

2006-02-24

2008-09-16

Luu, Pho M. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C385S105000, C385S105000

Reexamination Certificate

active

07426134

ABSTRACT:
A memory includes a phase-change memory cell and a circuit. The phase-change memory cell can be set to at least three different states including a substantially crystalline state, a substantially amorphous state, and at least one partially crystalline and partially amorphous state. The circuit applies a first voltage across the memory cell to determine whether the memory cell is set at the substantially crystalline state and applies a second voltage across the memory cell to determine whether the memory cell is set at a partially crystalline and partially amorphous state.

REFERENCES:
patent: 6671710 (2003-12-01), Ovshinsky et al.
patent: 6813177 (2004-11-01), Lowrey et al.
patent: 6831856 (2004-12-01), Pashmakov
patent: 6859390 (2005-02-01), Pashmakov
patent: 6914255 (2005-07-01), Lowrey
patent: 7190607 (2007-03-01), Cho et al.
patent: 2004/0057180 (2004-03-01), Pashmakov
patent: 2007/0058425 (2007-03-01), Cho et al.

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