Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1991-10-30
1994-05-24
LaRoche, Eugene R.
Static information storage and retrieval
Read/write circuit
Differential sensing
365203, 365196, 36523003, G11C 502, G11C 1134
Patent
active
053155556
ABSTRACT:
A sense amplifier of a semiconductor memory device for performing a high-speed sensing operation. A sensing node SAN and SAN of the sense amplifier is precharged to a power voltage level and during a sensing operation, first and second clock signals which are shifted to the power voltage and a ground voltage level, respectively, are applied to the sense amplifier. Thus, a potential difference of the sensing node dependent on a precharge state of the power voltage level is generated quickly and sufficiently. Therefore, the high speed sensing operation and a fast access of data can be performed, thereby improving the performance of the semiconductor memory device.
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Bushnell Robert E.
LaRoche Eugene R.
Nguyen Viet Q.
Samsung Electronics Co,. Ltd.
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