Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing
Reexamination Certificate
2005-07-05
2005-07-05
Ho, Hoai (Department: 2827)
Static information storage and retrieval
Read/write circuit
Flip-flop used for sensing
C365S145000, C365S149000, C365S189090
Reexamination Certificate
active
06914836
ABSTRACT:
An integrated circuit memory device can include a memory cell circuit configured to store data and a sense amplifier circuit configured to sense and amplify the stored data provided as a first input to the sense amplifier circuit in comparison to a reference voltage provided as a second input to the sense amplifier circuit. A bit line electrically can be coupled to the memory cell circuit and indirectly electrically coupled to the first input of the sense amplifier circuit and configured to provide the stored data to the sense amplifier circuit. A reference voltage line can also be indirectly electrically coupled to the second input of the sense amplifier circuit and configured to provide the reference voltage to the sense amplifier circuit.
REFERENCES:
patent: 5841718 (1998-11-01), Watters et al.
patent: 5883846 (1999-03-01), Lee
patent: 6185142 (2001-02-01), Hotta
patent: 6563753 (2003-05-01), Rickes et al.
Choi Mun-Kyu
Jeon Byung-Gil
Ho Hoai
Myers Bigel & Sibley & Sajovec
Samsung Electronics Co,. Ltd.
LandOfFree
Sense amplifier circuits using a single bit line input does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sense amplifier circuits using a single bit line input, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sense amplifier circuits using a single bit line input will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3406304