Sense amplifier and architecture for open digit arrays

Details Sense amplifier and architecture for open digit arrays Sense amplifier and architecture for open digit arrays

2005-01-04

2005-01-04

Lebentritt, Michael (Department: 2824)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S257000, C438S263000, C438S396000, C438S397000

Reexamination Certificate

active

06838337

ABSTRACT:
A method and apparatus are described which provide a memory device with sense amplifiers extending in a first direction and corresponding digit lines extending in a second direction perpendicular to the first direction. A pair of complementary digit lines may originate from different memory sub-arrays. The arrangement is particular useful for memory arrays having 6F**2 feature size.

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Notification of Transmittal of International Preliminary Examination Report.

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