Semicondutor device and manufacturing method thereof

Details Semicondutor device and manufacturing method thereof Semicondutor device and manufacturing method thereof

2005-09-21

2008-12-09

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S303000

Reexamination Certificate

active

07462545

ABSTRACT:
A semiconductor device is provided. The semiconductor device has a gate structure, a source region, a drain region, and a pair of dielectric barrier layers. The gate structure is formed on a substrate. The source region and the drain region are formed in the substrate next to the gate structure, and a channel region is formed between the source region and the drain region underneath the gate structure. The pair of dielectric barrier layers is respectively formed in the substrate underneath the gate structure between the source region and the drain region. The dielectric barrier layers are used for reducing the drain induced barrier lowering effect in a nanometer scale device.

REFERENCES:
patent: 6960785 (2005-11-01), Jin et al.
patent: 2002/0142551 (2002-10-01), Park et al.
patent: 2003/0234422 (2003-12-01), Wang et al.

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