Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Patent
1994-12-13
1996-03-19
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
257417, 257418, 257420, 7351402, 7351415, 7351436, 73DIG1, H01L 2982
Patent
active
055005497
ABSTRACT:
A semiconductor yaw rate sensor, which can be structured easily by means of an IC fabrication process, such that a yaw rate detection signal due to a current value is obtained by means of a transistor structure and a method of producing the same is disclosed. A weight supported by beams is disposed at a specified interval from a surface of a semiconductor substrate, and movable electrodes and excitation electrodes are formed integrally with the weight. Fixed electrodes for excitation use are fixed to the substrate in correspondence to the excitation electrodes. Along with this, source electrodes as well as drain electrodes are formed by means of a diffusion layer on a surface of the substrate at positions opposing the movable electrodes, such that drain current changes in correspondence with displacement of the movable electrodes by means of Corioli's force due to yaw rate, and the yaw rate is detected by this current.
REFERENCES:
patent: 4571661 (1986-02-01), Hoshino
patent: 4598585 (1986-07-01), Boxenhorn
patent: 5285097 (1994-02-01), Hirai
Kano Kazuhiko
Ohtsuka Yoshinori
Shibata Kozo
Takeuchi Yukihiro
Yamamoto Toshimasa
Mintel William
Nippondenso Co. Ltd.
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