Semiconductor with a nitrided silicon gate oxide and method

Details Semiconductor with a nitrided silicon gate oxide and method Semiconductor with a nitrided silicon gate oxide and method

2005-10-18

2005-10-18

Eckert, George (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000

Reexamination Certificate

active

06956267

ABSTRACT:
A method of fabricating a transistor includes providing a semiconductor substrate having a surface and forming a nitride layer outwardly of the surface of the substrate. The nitride layer is oxidized to form a nitrided silicon oxide layer comprising an oxide layer beneath the nitride layer. A high-K layer is deposited outwardly of the nitride layer, and a conductive layer is formed outwardly of the high-K layer. The conductive layer, the high-K layer, and the nitrided silicon oxide layer are etched and patterned to form a gate stack. Sidewall spacers are formed outwardly of the semiconductor substrate adjacent to the gate stack, and source/drain regions are formed in the semiconductor substrate adjacent to the sidewall spacers.

REFERENCES:
patent: 6407435 (2002-06-01), Ma et al.
patent: 6420729 (2002-07-01), Wallace et al.
patent: 6511876 (2003-01-01), Buchanan et al.
patent: 6674138 (2004-01-01), Halliyal et al.
patent: 6696332 (2004-02-01), Visokay et al.

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