Semiconductor wet etchant and method of forming...

Details Semiconductor wet etchant and method of forming... Semiconductor wet etchant and method of forming...

2008-07-08

2011-10-25

Tran, Binh X (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S754000, C438S756000, C438S757000, C216S105000, C216S107000, C216S109000

Reexamination Certificate

active

08043974

ABSTRACT:
A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to 3.6 wt % based on a total weight of the etchant, and a concentration of the inorganic salt is 1.0 to 5.0 wt % based on a total weight of the etchant. The inorganic salt comprises at least one of an ammonium ion (NH4+) and a chlorine ion (Cl−).

REFERENCES:
patent: 2002/0063062 (2002-05-01), Hymes
patent: 2004/0035448 (2004-02-01), Aegerter et al.
patent: 2005/0092349 (2005-05-01), Suzuki et al.
patent: 2005/0217707 (2005-10-01), Aegerter et al.
patent: 2006/0003596 (2006-01-01), Fucsko et al.
patent: 2006/0170110 (2006-08-01), Akram et al.
patent: 2000-269178 (2000-09-01), None
patent: 2004-006618 (2004-01-01), None

Affiliated with

Also associated with

Rating

Semiconductor wet etchant and method of forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor wet etchant and method of forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor wet etchant and method of forming... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4290662