Semiconductor wafer having different impurity concentrations...

Details Semiconductor wafer having different impurity concentrations... Semiconductor wafer having different impurity concentrations...

2006-10-10

2006-10-10

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having junction gate

C438S199000, C438S527000

Reexamination Certificate

active

07118948

ABSTRACT:
A semiconductor wafer has different impurity concentrations in respective regions and gate patterns have different lengths in the respective regions. The semiconductor wafer has different impurity concentrations in a central region, an intermediate region, and an outer region. The gate patterns have different lengths in the central region, the intermediate region, and the outer region. Accordingly, the semiconductor wafer may have a substantially uniform threshold voltage throughout the semiconductor wafer.

REFERENCES:
patent: 6586807 (2003-07-01), Nishida et al.
patent: 6653686 (2003-11-01), Wann
patent: 8055815 (1996-02-01), None
patent: P1999-005862 (1999-01-01), None

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