Semiconductor wafer and method of manufacturing the same

Details Semiconductor wafer and method of manufacturing the same Semiconductor wafer and method of manufacturing the same

1999-03-05

2000-11-14

Nguyen, Tuan H.

Semiconductor device manufacturing: process

With measuring or testing

438800, H01L 2166

Patent

active

061469114

ABSTRACT:
The average density and scattered light intensity or the average density and average size of void defects contained in a surface region in a predetermined depth of a semiconductor wafer sample are measured. An ingot whose a semiconductor wafer sample satisfies D.times.Is.ltoreq.a predetermined value between the measured average density D and scattered light intensity Is or satisfies D.times.L.sup.3 .ltoreq.fixed value between the measured average density D and average size L is extracted and wafers cut from the ingot are annealed. The semiconductor wafers having few residual defects in a surface region wherein devices are to be formed can be obtained.

REFERENCES:
patent: 5502331 (1996-03-01), Inoue et al.
patent: 5995217 (1998-08-01), Watanabe

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